Charge and Spin Transport in Disordered Graphene-Based Materials

Nonfiction, Science & Nature, Science, Other Sciences, Nanostructures, Technology, Material Science
Cover of the book Charge and Spin Transport in Disordered Graphene-Based Materials by Dinh Van Tuan, Springer International Publishing
View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart
Author: Dinh Van Tuan ISBN: 9783319255712
Publisher: Springer International Publishing Publication: October 22, 2015
Imprint: Springer Language: English
Author: Dinh Van Tuan
ISBN: 9783319255712
Publisher: Springer International Publishing
Publication: October 22, 2015
Imprint: Springer
Language: English

This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter.

View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter.

More books from Springer International Publishing

Cover of the book Green Building Transitions by Dinh Van Tuan
Cover of the book The FDA for Doctors by Dinh Van Tuan
Cover of the book Structural Health Monitoring and Damage Detection, Volume 7 by Dinh Van Tuan
Cover of the book Conducting Miranda Evaluations by Dinh Van Tuan
Cover of the book Glaciation and Speleogenesis by Dinh Van Tuan
Cover of the book Multiliteracies Pedagogy and Language Learning by Dinh Van Tuan
Cover of the book Peter von Zahn's Cold War Broadcasts to West Germany by Dinh Van Tuan
Cover of the book Classical Mechanics with Mathematica® by Dinh Van Tuan
Cover of the book Frontiers in Algorithmics by Dinh Van Tuan
Cover of the book Nanophotonics, Nanooptics, Nanobiotechnology, and Their Applications by Dinh Van Tuan
Cover of the book Interdisciplinary Studies in Pragmatics, Culture and Society by Dinh Van Tuan
Cover of the book Methodologies of Mediation in Professional Learning by Dinh Van Tuan
Cover of the book Computational Science and Its Applications – ICCSA 2018 by Dinh Van Tuan
Cover of the book Intellectual Property and Financing Strategies for Technology Startups by Dinh Van Tuan
Cover of the book Diversity and Inclusion in the Global Workplace by Dinh Van Tuan
We use our own "cookies" and third party cookies to improve services and to see statistical information. By using this website, you agree to our Privacy Policy